elektronische bauelemente SID15N10 15a, 100v, r ds(on) 110m n-ch enhancement mode power mosfet 22-apr-2013 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 251 15n10 a c d h g e f k b j p m rohs compliant product a suffix of -c specifies halogen free description the SID15N10 provide the designer with the best combination of fast switching. the to-251 package i s universally preferred for all commercial-industrial surface mount applications. the device is suited fo r charger, industrial and consumer environment. features r ds(on) Q 100m @ v gs = 10v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability marking package information package mpq leader size to-251 2.5k 13 inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v t c =25c 15 a continuous drain current t c =70c i d 13.8 a pulsed drain current 1 i dm 24 a t c =25c 34.7 w power dissipation t a =25c p d 2 w operating junction and storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings maximum thermal resistance junction-ambient (pcb mount) 3 r ja 62.5 c / w maximum thermal resistance junction-case 3 r jc 3.6 c / w 1 gate 3 source 2 drain date code millimeter millimeter ref. min. max. ref. min. max. a 6.40 6.80 g 5.40 5.80 b 5.20 5.50 h 0.90 1.50 c 2.20 2.40 j 2.30 d 0.45 0.55 k 0.60 0.90 e 6.80 7.20 m 0.50 0.70 f 7.20 7.80 p 0.45 0.60
elektronische bauelemente SID15N10 15a, 100v, r ds(on) 110m n-ch enhancement mode power mosfet 22-apr-2013 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss 100 - - v v gs =0, i d =250 a gate threshold voltage v gs(th) 1 - 2.5 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current i dss - - 1 a v ds =80v, v gs =0 static drain-source on-resistance 2 r ds(on) - 100 110 m v gs =10v, i d =8a total gate charge 2 q g - 26.2 - gate-source charge q gs - 4.6 - gate-drain (miller) change q gd - 5.1 - nc i d =10a v ds =80v v gs =10v turn-on delay time 2 t d(on) - 4.2 - rise time t r - 8.2 - turn-off delay time t d(off) - 35.6 - fall time t f - 9.6 - ns v ds =50v i d = 10a v gs =10v r l =5 r g =3.3 input capacitance c iss - 1535 - output capacitance c oss - 60 - reverse transfer capacitance c rss - 37 - pf v gs =0 v ds =15v f=1.0mhz gate resistance r g - 2 - f=1.0mhz source-drain diode forward on voltage 2 v sd - - 1.2 v i s =8.0a, v gs =0v notes: 1. pulse width limited by maximum junction tempera ture. 2. pulse test. 3. surface mounted on 1 in 2 copper pad of fr4 board.
elektronische bauelemente SID15N10 15a, 100v, r ds(on) 110m n-ch enhancement mode power mosfet 22-apr-2013 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
elektronische bauelemente SID15N10 15a, 100v, r ds(on) 110m n-ch enhancement mode power mosfet 22-apr-2013 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
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